PBHV9115T,215

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PBHV9115T,215 datasheet

• Маркировка
  PBHV9115T,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBHV9115T,215 Collector- Emitter Voltage Vceo Max: 150 V Configuration: Single Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 115MHz ID_COMPONENTS: 1949663 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 115 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 300mW Power Dissipation: 300 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 300mV @ 100mA, 500mA Voltage - Collector Emitter Breakdown (max): 150V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 200 V Collector- Emitter Voltage VCEO Max: 150 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 115 MHz DC Collector/Base Gain hfe Min: 100 at 50 mA at 10 V, 100 at 100 mA at 10 V, 10 at 1 A at 1 V DC Current Gain hFE Max: 100 at 50 mA at 10 V Maximum Power Dissipation: 300 mW Factory Pack Quantity: 3000 Part # Aliases: PBHV9115T T/R Other Names: 934061417215, PBHV9115T T/R
• Количество страниц
  12 шт.
• Форматы файла
  HTML, PDF

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